Weebit Nano Demonstrates Integration of Selector with ReRAM Cell for Stand-Alone Memory Market

By Tiera Oliver

Associate Editor

Embedded Computing Design

July 06, 2021

News

Weebit Nano Demonstrates Integration of Selector with ReRAM Cell for Stand-Alone Memory Market

Weebit Nano Limited announced it has created the industry’s first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.

This announcement is designed to reach Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments. 

According to the copany, OTS is an ideal selector technology for discrete ReRAM chips as it enables the smallest ReRAM bit cell, as small as 4F2, as well as endurance, low energy consumption, and high switching speed. 

“New markets like IoT, 5G and AI are driving needs for emerging NVM on advanced process nodes,” said Jim Handy, Memory Analyst, Objective Analysis. “Weebit’s combination of ReRAM with an OTS selector promises to scale to the advanced processes and high memory densities that new memory chips will need.”



For more information, visit: www.weebit-nano.com

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Tiera Oliver, Associate Editor for Embedded Computing Design, is responsible for web content edits, product news, and constructing stories. She also assists with newsletter updates as well as contributing and editing content for ECD podcasts and the ECD YouTube channel. Before working at ECD, Tiera graduated from Northern Arizona University where she received her B.S. in journalism and political science and worked as a news reporter for the university’s student led newspaper, The Lumberjack.

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