Microchip Technology Announced the Company’s First GaN MMIC, the GMICP2731-10 GaN MMIC Power Amplifier
June 23, 2021
The new GMICP2731-10 GaN MMIC power amplifier is designed to help maintain signal fidelity by allowing Earth stations to transmit at high RF levels without sacrificing the quality of the signal.
The new device, Microchip’s first GaN MMIC, is designed for use in commercial and defense satellite communications, 5G networks, and other aerospace and defense systems.
The GMICP2731-10 is fabricated using GaN-on-Silicon Carbide (SiC) technology. Per the company, it delivers up to 10W of saturated RF output power across the 3.5 GHz of bandwidth between 27.5 to 31 GHz. Its power-added efficiency is 20%, with 22 dB of small-signal gain and 15 dB of return loss. A balanced architecture allows the GMICP2731-10 to be well matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration.
Microchip provides board design support to help with design-ins, as does the company’s distribution partners. The company also provides compact models for the GMICP2731-10, which allow customers to model the performance and expedite the design of the power amplifier in their systems.
The GMICP2731-10 is available today in volume production. To purchase the GMICP2731-10, visit the purchasing portal.
For more information, visit: www.microchip.com.