STMicro's 600V Three-Phase Gate Driver Offers Smart Shutdown
July 23, 2019
The STMicroelectronics STDRIVE601 3-phase gate driver for 600V N-channel power MOSFETs and IGBTs is secure against negative voltage spikes down to -100V, and responds to logic inputs in 85ns.
The STMicroelectronics STDRIVE601 3-phase gate driver for 600V N-channel power MOSFETs and IGBTs is secure against negative voltage spikes down to -100V, and responds to logic inputs in 85ns. Featuring smart-shutdown circuitry for fast-acting protection, the STDRIVE601 turns off the gate-driver outputs immediately after detecting overload or short-circuit, for a period determined using an external capacitor and resistor. Designers can set the required duration, using large C-R values if needed, without affecting the shutdown reaction time. An active-low fault indicator pin is provided.
The SO28-packaged STDRIVE601 replaces three half-bridge drivers to ease PCB layout and optimize the performance of 3-phase motor drives for equipment such as home appliances, industrial sewing machines, and industrial drives and fans. All outputs can sink 350mA and source 200mA, with a gate-driving voltage range of 9V-20V, for driving N-channel power MOSFETs or IGBTs. Matched delays between the low-side and high-side sections eliminate cycle distortion and allow high-frequency operation, while interlocking and deadtime insertion are featured to prevent cross conduction.
Fabricated in ST’s BCD6S offline process, the STDRIVE601 operates from a logic supply voltage up to 21V and high-side bootstrap voltage up to 600V. Bootstrap diodes are integrated, saving the bill of materials, and under-voltage lockout (UVLO) on each of the low-side and high-side driving sections prevents the power switches operating in low-efficiency or dangerous conditions. An evaluation board, EVALSTDRIVE601, is available to help users explore the features of the STDRIVE601.
Learn more at www.st.com.