Toshiba Releases TW070J120B, SiC MOSFET Device
October 19, 2020
Toshiba released the TW070J120B, a 1200V SiC MOSFET for high power industrial applications.
Toshiba released the TW070J120B, a 1200V SiC MOSFET for high power industrial applications. Such applications include 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS).
The MOSFET makes significant contributions in reducing power consumption and improved power density, all this thanks to the SiC which allows devices to deliver high voltage resistance, high-speed switching, and low On-resistance.
Developed with the company’s second generation-chip design, it offers enhanced reliability in addition to low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 70mΩ (typ.).
Compared to a 1200V silicon IGBT, the device reduces turn-off switching loss by about 80% and switching time by 70% while delivering low on-voltage characteristics with a drain current (ID) of up to 20A.
Further, the gate threshold voltage operates in a range of 4.2V to 5.8V.
For more information, visit https://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/detail.TW070J120B.html.