Toshiba Releases TW070J120B, SiC MOSFET Device

By Perry Cohen

Associate Editor

Embedded Computing Design

October 19, 2020

News

Toshiba Releases TW070J120B, SiC MOSFET Device

Toshiba released the TW070J120B, a 1200V SiC MOSFET for high power industrial applications.

Toshiba released the TW070J120B, a 1200V SiC MOSFET for high power industrial applications. Such applications include 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS).

The MOSFET makes significant contributions in reducing power consumption and improved power density, all this thanks to the SiC which allows devices to deliver high voltage resistance, high-speed switching, and low On-resistance.

Developed with the company’s second generation-chip design, it offers enhanced reliability in addition to low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 70mΩ (typ.).

Compared to a 1200V silicon IGBT, the device reduces turn-off switching loss by about 80% and switching time by 70% while delivering low on-voltage characteristics with a drain current (ID) of up to 20A.

Further, the gate threshold voltage operates in a range of 4.2V to 5.8V.

For more information, visit https://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/detail.TW070J120B.html.

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Perry Cohen, associate editor for Embedded Computing Design, is responsible for web content editing and creation, podcast production, and social media efforts. Perry has been published on both local and national news platforms including KTAR.com (Phoenix), ArizonaSports.com (Phoenix), AZFamily.com, Cronkite News, and MLB/MiLB among others. Perry received a BA in Journalism from the Walter Cronkite School of Journalism and Mass Communications at Arizona State university.

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