Toshiba Announces Compact Low ON-Resistance N-Channel MOSFETs for Automotive

By Tiera Oliver

Assistant Editor

Embedded Computing Design

August 18, 2020

News

Automotive-qualified devices curb power consumption for vehicle fuel economy.

Toshiba Electronics Europe GmbH developed a series of new N-channel MOSFETs for automotive applications that are based on the company’s advanced U-MOSVIII-H process technology.

The XPN3R804NC and XPN7R104NC both have 40V voltage ratings, while the XPN6R706NC and XPN12006NC support 60V operation. According to the company, they all exhibit low ON-resistance values, reaching down to 3.8mΩ (for the XPN3R804NC at 10V), plus minimal leakage current.

These MOSFETs are housed in surface-mount TSON Advance (WF) packages which ensure that board utilization is kept to a minimum. They have a 3.3mm × 3.6mm (typical) footprint and can replace devices with a size of 5mm × 6 mm. Through inclusion of wettable flank terminals, board mounting procedures, and automated optical inspection (AOI) activities are also aided.

Fully AEC-Q101-compliant, these MOSFET devices are intended for deployment within automotive environments. Their compactness allows shrinkage in the size of vehicles’ electronic control units (ECUs). Other potential application scenarios where they may be utilized include switching regulators, DC-DC converters and motor drivers.

For more information, visit: https://www.toshiba.co.jp/worldwide/

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Tiera Oliver, Assistant Editor for Embedded Computing Design, is responsible for web content edits and constructing stories. She also assists with newsletter updates as well as contributing and editing content for ECD podcasts and the ECD YouTube channel. Before working at ECD, Tiera graduated from Northern Arizona University where she received her B.S. in journalism and political science and worked as a news reporter for the university’s student led newspaper, The Lumberjack.

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