Vishay's latest Dual N-Channel 60 V MOSFETs Enable Increased Power Density and Efficiency
December 19, 2019
The result is reduced voltage drops across the power path and minimized power losses for increased efficiency.
Vishay Intertechnology introduced a common-drain dual n-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Targeting battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN is presented as having the lowest RDS(ON) in a 60V common-drain device.
The dual MOSFET released today provides an RDS(ON) down to 10 mΩ typical at 10V, presented as the lowest among 60V devices in a 3x3-mm footprint, up to 89 % lower than legacy solutions. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency. The device uses an optimized package construction, with two monolithically-integrated TrenchFET Gen IV n-channel MOSFETs in a common drain configuration.
The SiSF20DN's source contacts are placed side by side, with enlarged connections to increase the contact area and reduce resistivity, making it useful for bidirectional switching in 24V systems and industrial applications. The SiSF20DN is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free. Pricing for U.S. delivery only starts at $0.86 per piece in 10,000-piece quantities.
For more information, please visit: www.vishay.com