Infineon's 950 V CoolMOS™ PFD7 family is Ready for Lighting and Industrial SMPS Applications
October 27, 2022
News
Munich, Germany. Infineon Technologies has set a new benchmark in 950 V superjunction (SJ) technology with its CoolMOS PFD7 high-voltage MOSFET family including an embedded body diode for ultra-low reverse recovery charge (Q rr) and reduced switching losses (E OSS, Q OSS, and Q g) for better efficacy in hard- and soft-switching applications, with the effect of up to 4°K lower MOSFET temperature than previous technology.
Infineon’s CoolMOS PFD7 high-voltage MOSFET family enhances light- and full-load PFC proficiency by more than 0.2% coordinating implementation with respects to LLC efficiency for a cleaner environment.
The CoolMOS has a gate-source threshold voltage (V (GS),th) of 3 V and smallest V (GS),th variation of ±0.5 V with up to 55% (V (GS),th) of 3 V and smallest V (GS),th variation of ±0.5 V with lower on resistance (R DS(on)) components in several SMD and THD packages, like 450 mΩ in DPAK or 60 mΩ in TO247.
The Infineon CoolMOS PFD7 high-voltage MOSFET family is suitable for lighting systems and SMPS applications.
For more information, visit infineon.com.
Chad Cox. Production Editor, Embedded Computing Design, has responsibilities that include handling the news cycle, newsletters, social media, and advertising. Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature.
