GaN Systems and ON Semi Release Half-Bridge Evaluation Board to Demonstrate Performance Leap in GaN

November 07, 2019

Product

GaN Systems and ON Semi Release Half-Bridge Evaluation Board to Demonstrate Performance Leap in GaN

GaN Systems and ON Semiconductor announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems? 650 V, 30 A GaN E-HEMTs and ON Semiconductor?s NCP51820 high speed gate d

GaN Systems and ON Semiconductor announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high speed gate driver evaluation board. The kit has a reduced component count in a 25mm x 25mm layout. Features include 1+ MHz operation and a 200 V/ns CMTI rating. Benefits of GaN-based power systems include significant reductions in power losses, weight, size (up to 80%), and system costs (up to 60% BOM cost savings). 

For more information, visit www.gansystems.com or www.onsemi.com.