UnitedSiC’s Latest SiC FETs Suited for Mainstream 800-V Bus Architectures
June 13, 2022
Blog
United SiC, now a division of Qorvo, recently announced a next-generation series of 1200-V Silicon Carbide (SiC) FETs with what the company claims is the industry’s best spec for on-resistance.
The UF4C/SC series of Gen 4 FETs are suited for mainstream 800-V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC-to-DC solar inverters, as well as welding machines, uninterruptible power supplies, and induction heating applications.
All RDS(on) options (23, 30, 53, and 70 mΩ) are offered in industry standard four-lead kelvin source TO-247 packages, providing cleaner switching at higher performance levels. The 53- and 70-mΩ devices are also available in the TO-247 three-lead package. This series of parts have excellent reliability, based on the well-managed thermal performance, which is a result of an advanced silver-sinter die attach and advanced wafer-thinning process.
All 1200-V SiC FETs are included in Qorvo’s FET-Jet Calculator, a free online design tool that allows for instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.
In lots of 1000 and up, pricing for the 1200-V Gen 4 SiC FETs ranges from $5.71 for the UF4C120070K3S, to $14.14 for the UF4SC120023K4S.
Richard Nass’ key responsibilities include setting the direction for all aspects of OSM’s ECD portfolio, including digital, print, and live events. Previously, Nass was the Brand Director for Design News. Prior, he led the content team for UBM’s Medical Devices Group, and all custom properties and events. Nass has been in the engineering OEM industry for more than 30 years. In prior stints, he led the Content Team at EE Times, Embedded.com, and TechOnLine. Nass holds a BSEE degree from NJIT.
