ON Semiconductor Announces New 650V Silicon Carbide MOSFETs
February 18, 2021
Switching and improved reliability to deliver power density improvements for challenging applications.
ON Semiconductor announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications. According to. the company, by replacing existing silicon switching technologies with the new SiC devices, designers will achieve better performance in applications such as electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms, and uninterruptible power supplies (UPS).
ON Semiconductor’s new Automotive AECQ101 and Industrial grade qualified 650 volt (V) SiC MOSFETs are based upon a new wide bandgap material that provides ideal switching performance and improved thermals when compared to silicon. Per the company, this results in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI), and reduced system size and weight.
The new generation of SiC MOSFETs employ an active cell design combined with thin wafer technology enabling figure of merit Rsp (Rdson*area) for 650 V breakdown voltage. Also, per the company, the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1, and NTH4L015N065SC1 have the lowest Rdson (12 mOhm) in the market in D2PAK7L and To247 packages. This technology is also designed around energy loss figure of merits for suitable performance in automotive and industrial applications. An internal gate resistor (Rg) allow flexibility to designers, eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability, and short circuit robustness all contribute to ruggedness that delivers reliability and long device lifetimes.
The new devices are all surface mount and available in industry standard package types including TO247 and D2PAK.
For more information, visit http://www.onsemi.com