Nexperia Releases New GaN FET Devices
June 11, 2020
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company's high-voltage GaN HEMT H2 technology.
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance.
Features of the new GaN FET devices, per a press release, include the following:
The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 m? (max., 35 m? typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 m? (max., 33 m? typ. At 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.
Nexperia’s CCPAK surface mount packaging leverages the company’s copper-clip package technology, which replaces internal bond wires. The technology allows for reduction in parasitic losses, optimizes electrical and thermal performance, and improves reliability, according to the company.
For more information, visit www.nexperia.com/gan-fets.