High data rates and low latency optimize 28 GHz fixed wireless base stations
July 10, 2018
Qorvo has expanded its offerings for 5G applications with 28 GHz Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end modules (FEMs).
Qorvo has expanded its offerings for 5G applications with 28 GHz Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end modules (FEMs). These new FEMs reduce overall system cost for base station equipment manufacturers as they expand into 5G. According to SNS Telecom & IT, the 28 GHz frequency band is widely preferred for early 5G-based fixed wireless access deployments. The market for fixed wireless 5G services is further expected to grow at a CAGR of approximately 84% between 2019 and 2025, eventually accounting for more than $40 billion.
Qorvo’s new GaN FEMs enable smaller, more powerful, and efficient millimeter-wave, phased array systems, which will steer signals to areas of greatest congestion. Using Qorvo’s 0.15-micron GaN-on-SiC technology in this application translates into a more than 90 percent reduction in the number of elements required over silicon germanium technology – from 1,024 to just 64 for an effective isotropic radiated power (EIRP) of 65 dBm.
The Qorvo single-channel QPF4001 and dual-channel QPF4002 GaN FEMs have small footprints that integrate up to two multi-function GaN monolithic microwave integrated circuits (MMICs) in a single package. Each MMIC die combines a three-stage low-noise amplifier, a three-stage power amplifier, and a low-loss transmit/receive (T/R) switch.
Engineering samples of the QPF4001 and QPF4002 FEMs will be available to qualified customers at the end of this month.