X-FAB introduces highly-sensitive 180nm SPAD and APD devices
June 24, 2019
The low breakdown voltage (<20V) facilitates their incorporation onto customer dies. As integral parts of the X-FAB design kit, they are fully characterized, and can be combined with other features.
X-FAB Silicon Foundries announced the availability of avalanche photodiode (APD) and single-photon avalanche diode (SPAD) products for implementation in scenarios where there are extremely low light conditions to contend with and augmented sensitivity is required, as well as tight timing resolutions involved.
Based on the company’s 180nm high-voltage XH018 process, the APD has a strong linear gain figure, and is fully scalable - going from just ten to several hundred micrometer dimensions. The proprietary X-FAB quenching circuit used in the SPAD results in a dead time of less than 15ns - thereby supporting high bandwidth. In addition, its low dark count rate (<100 counts/s/µm²) means that it is far less susceptible to thermal noise. The high photon detection probability (PDP) of the SPAD ensures that a much higher proportion of incident photons trigger an avalanche, and this is maintained across an extensive range of wavelengths (e.g. 40 percent at 400nm).
The low breakdown voltage (<20V) facilitates their incorporation onto customer dies. As integral parts of the X-FAB design kit, they are fully characterized, and can be combined with other modules featured in the XH018 process. Models for optical and electrical simulation, along with a specific application note, will help designers to integrate these devices into their circuitry within a short time period. As well as being supplied in a function block format, a quenching reference circuit that fully demonstrates the capabilities of the SPAD is also available.
For more information, visit www.xfab.com.