Mouser and Transphorm Announce Global Distribution Agreement
September 24, 2019
Mouser Electronics has signed a global distribution agreement with Transphorm, manufacturers of gallium nitride (GaN) transistors for high-voltage power conversion applications.
Mouser Electronics has signed a global distribution agreement with Transphorm, manufacturers of gallium nitride (GaN) transistors for high-voltage power conversion applications. According to the agreement, Mouser will distribute Transphorm’s lines of JEDEC- and AEC-Q101-qualified GaN FETs and evaluation tools.
Transphorm’s 900 V GaN FETs in a TO-220 package and 650 V GaN FETs in TO-247 and TO-220 packages combine high-voltage GaN HEMT and low-voltage MOSFET technologies. The devices feature low crossover losses, reduced gate charge, and smaller reverse recovery charge, offering similar field reliability to silicon carbide (SiC) FETs and improved performance when compared to silicon MOSFETs.
Transphorm’s automotive-qualified GaN FETs include the TPH3205WSBQA, the industry’s first GaN solution to earn AEC-Q101 qualification, and the TP65H035WSQA, the industry’s first 175-degree-Celsius-rated, AEC-Q101-qualified device.
Mouser is also stocking related evaluation platforms from Transphorm, which allow designers to study switching characteristics and efficiency. The kits support various power system topologies, including inverters, half-bridge buck or boost (through-hole and SMD solutions), and the bridgeless totem-pole PFC. They also cover a range of power ratings to support various applications. Examples include the 1.2 kW and 2.5 kW half-bridge evaluation platforms as well as the 2.5 kW and 4 kW bridgeless totem-pole PFC evaluation platforms.
Learn more at www.mouser.com.