Littelfuse Introduces 1200-V SiC MOSFETs with Ultra-Low On-Resistances
March 13, 2018
These devices are designed to outperform silicon MOSFETs and IGBTs for ultra-fast switching in power conversion systems.
A strategic partnership between Littelfuse and Monolith Semiconductor has resulted in two 1200-V silicon carbide (SiC) n?channel, enhancement-mode MOSFETs. These SiC MOSFETs, actually not the first fruit from this partnership, are aimed at the industrial and automotive markets. The parts were introduced at last week’s APEC event, amid the on-going GaN verses SiC debate.
The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels, just 120 and 160 mΩ, respectively. These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems. They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match.
Typical applications include electric vehicles, industrial machinery, renewable energy, medical equipment, switch-mode and uninterruptible power supplies, and motor drives.
LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450.