United SiC, now a division of Qorvo, recently announced a next-generation series of 1200-V Silicon Carbide (SiC) FETs with what the company claims is the industry’s best spec for on-resistance.

The embedded industry is getting more comfortable with silicon carbide (SiC) power semiconductors, as it’s no longer considered a “new” or “bleeding edge” technology. It’s now considered a mainstream technology.

The fear (that’s probably too strong of a word) surrounding silicon carbide (SiC) power semiconductors has subsided for the most part.

The fast switching speed, high voltage rating, and low RDS(on) of silicon carbide (SiC) MOSFETs make them highly appealing for power designers who are constantly looking into ways to increase efficiency and power density, while maintaining system simplicity.

Here?s a slideshow of some of the interesting sights and people that were at PCIM 2019.

UnitedSiC released a range of SiC JFET die, suitable for co-packaging with a controller IC with built in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100 W Flyback product.