Plessey?s Manufacturing Method for Green LEDs Promises to Empower microLED Displays

April 05, 2019

Plessey?s Manufacturing Method for Green LEDs Promises to Empower microLED Displays

Plessey has developed a 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion.

Plessey has developed a 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion. Instead of applying phosphors or quantum dot conversion materials to native Blue LEDs, Plessey’s native Green LEDs are formed inherently using their GaN-on-Si epitaxial growth process, similar to the native Blue LEDs, with the principal difference coming in the amount of indium that is incorporated in the quantum well structures.  

No color conversion losses enable brightness orders of magnitude greater than legacy devices, making them particularly suitable for microLEDs. They have a dominant Green wavelength of 530nm and a full-width half maximum wavelength of 31nm, and a high wavelength stability versus current density.

For more information, visit www.plesseysemiconductors.com.

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