EPC?s latest GaN half-bridge shrinks package while upping efficiency

June 05, 2017

EPC?s latest GaN half-bridge shrinks package while upping efficiency

Providing power designers with a means to increase system efficiency for point-of-load (PoL) applications, Efficient Power Conversion’s EPC2111 enhancement-mode monolithic GaN transistor half...

Providing power designers with a means to increase system efficiency for point-of-load (PoL) applications, Efficient Power Conversion’s EPC2111 enhancement-mode monolithic GaN transistor half bridge integrates two eGaN power FETs into one device. Not only does this remove interconnect inductances and the interstitial space needed on the PCB, it increases both efficiency (especially at higher frequencies) and power density while reducing assembly costs.

Targeting high-frequency 12-V to point-of-load (PoL) DC-to-DC applications, the 30-V device’s upper FET has a typical RDS(on) of 14 mΩ, and the lower FET has a typical RDS(on) of 6 mΩ. And it’s all in a chip-scale package that measures just 3.5 by 1.5 mm. The high-frequency capability of GaN reduces the size required for power conversion, enabling significant size reduction in next-generation  power solutions.

The EPC2111 monolithic half-bridge price sells for $1.62 each in lots of 1000.

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