ROHM’s New 5th Generation P-Channel MOSFETs Deliver Low ON Resistance
February 11, 2021
ROHM developed low ON resistance -40V / -60V P-channel MOSFETs compatible with 24V input, utilizing a 5th generation refined process.
ROHM Semiconductor announced a 24-model lineup of 24V input, -40V / -60V withstand voltage P-channel MOSFETs available in both single (RqxxxxxAT / RdxxxxxAT / RsxxxxxAT / RFxxxxxAT) and dual configurations (UTxxx5/QHxxx5/SHxxx5). These new devices are ideal for industrial and consumer applications, such as factory automation, robotics, and air conditioning systems.
Based on ROHM’s P-channel MOSFET structure, these new products leverage process technology to achieve low ON resistance per unit area in their class. For the new -40V products, this translates to 62% lower ON resistance than conventional products, and 52% lower ON resistance for the new -60V products.
Per the company, quality is improved by optimizing the device structure and adopting a new design that mitigates electric field concentration. As a result, both high reliability and low ON resistance (which are typically in a trade-off relationship) are achieved. These solutions contribute to stable long-term operation in industrial equipment demanding suitable quality.
ROHM continues to develop a variety of packages for a range of applications, including products optimized for the automotive sector. In addition to these 5th generation P-channel MOSFETs, to strengthen ROHM’s lineup for 5G base stations and data center servers, the company is developing higher efficiency N-channel MOSFETs. These products are designed to contribute to reducing application design load while increasing efficiency and reliability.
The low ON resistance -40V / -60V P-channel MOSFETs are available in mass production.
For more information, visit: https://www.rohm.com/